描述
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描述
第三代宽禁带半导体材料功率器件是未来高性能功率器件的重要组成部分之一。捷瑞德研发团队在宽禁带半导体研究上有丰富的经验。
产品列表
Product NO.Blocking VoltageRDS(ON) at 25°CGenerationCurrent RatingGate Charge TotalOutput CapacitanceTotal Power Dissipation (PTOT)Maximum Junction TemperaturePackageStatus
JR3M0060065K650 V60 mΩGen 337 A46 nC80 pF150 W175 °CTO-247-4Coming Soon
JR3M0060065D650 V60 mΩGen 329 A46 nC80 pF150 W175 °CTO-247-3Coming Soon
JR3M0120065D650 V120 mΩGen 322 A28 nC45 pF98 W175 °CTO-247-3Coming Soon
JR3M0120065K650 V120 mΩGen 322 A28 nC45 pF98 W175 °CTO-247-4Coming Soon
JR3M0040120K1200 V40 mΩGen 366 A99 nC103 pF326 W175 °CTO-247-4Coming Soon
JR3M0040120D1200 V40 mΩGen 366 A101 nC103 pF326 W175 °CTO-247-3Coming Soon
JR3M0075120D1200 V75 mΩGen 330 A54 nC58 pF113.6 W150 °CTO-247-3Production
JR3M0075120K1200 V75 mΩGen 330 A51 nC58 pF113.6 W150 °CTO-247-4Coming Soon
JR3M0075120K-A1200 V75 mΩGen 332 A51 nC58 pF136 W175 °CTO-247-4Coming Soon
JR3M0075120D-A1200 V75 mΩGen 332 A54 nC58 pF136 W175 °CTO-247-3Production