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MOSFET

SGT MOS系列MOSFET产品采用半浮栅结构，兼备了传统平面结构和SGT结构的功率MOSFET的优点，并具有更高的工艺稳定性和可靠性及更快的开关速度、更小的栅电荷和更高的应用效率等优点。SGT MOS系列MOSFET产品涵盖20V~200V全系列，可广泛应用于电机驱动、同步整流等领域中。

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Part No.	BV(V)	IDP(A)	RDS(ON) (mΩ)@VGS = 10V		RDS(ON) (mΩ)@VGS = 4.5V		VTH (V)			Package
Part No.	BV(V)	IDP(A)	Typ.	Max.	Typ.	Max.	Min.	Typ.	Max.	Package
JRP14N08L-D	80	32	13.8	15	21	23	1	1.8	2.5	TO-252
JRP14N08L-Q	80	32	13.8	15	21	23	1	1.8	2.5	DFN5*6
JRP065N08G-D	85	80	5.4	6.5			2	3	4	TO-252
JRP065N08G-P	85	80	5.4	6.5			2	3	4	TO-220
JRP065N08G-B	85	80	5.4	6.5			2	3	4	TO-263
JRP065N08GL-Q	85	80	5.1	6.5	7	8.5	1	1.8	2.5	DFN5*6
JRP065N08GL-D	85	80	4.7	5.5	6.3	7.5	1	1.8	2.5	TO-252
JRP065N08GL-E	85	80	6	7	7	8.5	1	1.8	2.5	SOP8
JRP05N08G-Q	85	80	4.4	5			2	3	4	DFN5*6
JRP05N08G-P	85	120	4.4	5			2	3	4	TO-220
JRP05N08G-B	85	120	4.4	5			2	3	4	TO-263
JRP04N08-P	85	120	3	3.6			2	3	4	TO-220
JRP04N08-B	85	120	3	3.6			2	3	4	TO-263
JRP04N08-BA	85	120	3	3.6			2	3	4	TO-263-7
JRP03N08-P	85	180	2.3	3			2	3	4	TO-220
JRP03N08-B	85	180	2.3	3			2	3	4	TO-263
JRP03N08-BA	85	180	2.3	3			2	3	4	TO-263-7
JRP03N08-F	85	180	2.3	3			2	3	4	TO-247
JRP02N08-B	85	180	1.6	2			2	3	4	TO-263
JRP02N08-BA	85	180	1.6	2			2	3	4	TO-263-7
JRP02N08-F	85	180	1.6	2			2	3	4	TO-247
JRP02N08-T	85	360	1.2	1.5			2	3	4	TOLL-8
JRP055N09G-P	90	120	5	5.5			2	3	4	TO-220
JRP12N10G-D	100	49	10.5	12			2	3	4	TO-252
JRP12N10G-Q	100	35	10.5	12			2	3	4	DFN5*6
JRP12N10G-E	100	20	10.5	12			2	3	4	SOP8
JRP12N10G-P	100	55	10.5	12			2	3	4	TO-220
JRP12N10GL-D	100	49	9.5	12	13	15	1	1.8	2.5	TO-252
JRP12N10GL-Q	100	35	9.5	12	13	15	1	1.8	2.5	DFN5*6
JRP12N10GL-E	100	20	9.5	12	13	15	1	1.8	2.5	SOP8
JRP045N10-P	100	120	3.8	4.5			2	3	4	TO-220
JRP045N10-B	100	120	3.8	4.5			2	3	4	TO-263
JRP03N10-P	100	180	2.7	3			2	3	4	TO-220
JRP03N10-B	100	180	2.7	3			2	3	4	TO-263
JRP03N10-F	100	180	2.7	3			2	3	4	TO-247
JRP03N10-BA	100	180	2.7	3			2	3	4	TO-263-7
JRP03N10-T	100	180	2.7	3			2	3	4	TOLL-8
JRP023N10-P	100	180	1.8	2.3			2	3	4	TO-220
JRP023N10-B	100	180	1.8	2.3			2	3	4	TO-263
JRP023N10-T	100	360	1.4	2			2	3	4	TOLL-8

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