JR3N100, the silon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. The transistor is suitabledevice for SMPS, high speed switching and general purpose applications
JR3N100, the silon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. The transistor is suitabledevice for SMPS, high speed switching and general purpose applications
